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MMBTSC930
NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into four groups, C, D, E and F, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 30 20 5 30 200 125 -55 to +125 Unit V V V mA mW
O
C C
O
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/10/2005
MMBTSC930
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group C D E F Collector Cutoff Current at VCB=10V Emitter Cutoff Current at VEB=4V Gain Bandwidth Product at VCE=6V, IC=1mA Reverse Transfer Capacitance at VCB=6V, f=1MHz Base to Collector Time Constant at VCB=6V, IC=1mA, f=31.9MHz Noise Figure at VCB=6V, IC=1mA, f=100MHz Turn-on Time at VIN=+12V, VBE=-3V,appointed circuit Turn-off Time at VIN=-12V, VBE=+3V, appointed circuit toff 30 ns ton 30 ns NF 4 dB RbbCc 20 36 ps Cre 1 1.3 1.8 pF fT 170 300 MHz IEBO 1 A ICBO 1 A hFE hFE hFE hFE 40 60 100 160 80 120 200 320 Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/10/2005

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